RECENT ADVANCES IN SURFACE STUDIES: ION BEAM ANALYSIS.MORGAN DV.1975; CONTEMPOR. PHYS.; G.B.; DA. 1975; VOL. 16; NO 3; PP. 221-241; BIBL. 15 REF.Article

Medium-energy ion spectroscopy using ion implanterRADZIMSKI, Z. J; YOKOYAMA, S; ISHIBASHI, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 7A, pp L962-L965, issn 0021-4922, 2Article

UTILISATION DE LA RETRODIFFUSION D'IONS DE MOYENNE ENERGIE POUR LA DETERMINATION DE COMPOSITIONS ET DE STRUCTURES CRISTALLINES DE SURFACE.COHEN C.1977; VIDE; FR.; DA. 1977; NO 189; PP. 135-138; ABS. ANGL.; BIBL. 7 REF.Article

RANGE PARAMETER DISTORTION IN HEAVY ION IMPLANTATION.BLANK P; WITTMAACK K.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 54; NO 1; PP. 33-34; BIBL. 16 REF.Article

TRANSMISSION SPUTTERING AS A TECHNIQUE FOR MEASURING THE DISTRIBUTION OF ENERGY DEPOSITED IN SOLIDES BY ION BOMBARDMENT.BAY HL; ANDERSEN HH; HOFER WO et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 1-2; PP. 87-95; BIBL. 38 REF.Article

Mécanismes de croissance et propriétés électroniques des films anodiques formés sur le titane sous irradiation alpha = Growth mechanisms and electronics properties of anodics films formed on titanium under alpha-radiationSAKOUT, Touria; OUDAR, J.1993, 149 p.Thesis

SAMPLE CONTAMINATION CAUSED BY SPUTTERING DURING ION IMPLANTATIONHEMMENT PLF.1979; VACUUM; ISSN 0042-207X; GBR; DA. 1979; VOL. 29; NO 11-12; PP. 439-442; BIBL. 12 REF.Article

RESONANT ABSORPTION OF THE GAMMA -RADIATION FROM THE ²²NE(P,GAMMA )²³NA REACTION AND THE EFFECT OF RUTHERFORD SCATTERING IN THE TARGET ON THE WIDTH OF THE ABSORPTION CURVESDU TOIT ZB; DE KOCK PR; HOUGH JH et al.1972; Z. PHYS.; DTSCH.; DA. 1972; VOL. 255; NO 2; PP. 97-102; BIBL. 6 REF.Serial Issue

COMBINED ION IMPLANTATION-ANALYSIS SAMPLE CHAMBER.PETERSON GD; EERNISSE EP.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 1153-1156; BIBL. 3 REF.Article

THE CHARACTERIZATION OF GAAS SURFACES.WOOD DR; MORGAN DV.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 773-777; BIBL. 15 REF.Article

KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON.POATE JM; TISONE TC.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 8; PP. 391-393; BIBL. 14 REF.Article

THE DEPENDENCE OF ANGULAR WIDTH PSI _1/2 OF THE AXIAL DIP ON THE DEPTH OF PARTICLE PENETRATION INTO CRYSTAL.KUMAKHOV MA; MURALEV VA; RUDNEV AS et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 4; PP. 273-275; BIBL. 9 REF.Article

REALISATION DE MONOCRISTAUX MINCES PAR EPITAXIE ET ETUDE DE LEUR QUALITE PAR DIFFUSION DE RUTHERFORD EN GEOMETRIE DE CANALISATION.KIRSCH R.1975; ; S.L.; DA. 1975; PP. (63P.); BIBL. 2 P.; (THESE DOCT. UNIV., MENTION SCI. PHYS.; CLAUDE BERNARD LYON)Thesis

The fingers of the physicsFOSCHINI, L.Annales de la Fondation Louis de Broglie. 2000, Vol 25, Num 1, pp 67-79, issn 0182-4295Article

Optimized Rutherford-scattering geometries for intense ion-beam diagnosticsSTYGAR, W. A; MIX, L. P; LEEPER, R. J et al.Review of scientific instruments. 1991, Vol 62, Num 6, pp 1527-1530, issn 0034-6748Article

Large deflection beam transport with screened rutherford scatteringPOMRANING, G. C.Progress in nuclear energy (New series). 1999, Vol 34, Num 4, pp 377-386, issn 0149-1970Article

Measurements of ion temperatures by means of Rutherford scattering of energetic neutrals above the limiting angleVAN BLOCKLAND, A. A. E; DONNE, A. J. H.Journal of applied physics. 1989, Vol 65, Num 2, pp 468-473, issn 0021-8979, 6 p.Article

Studies on sprayed lanthanum sulphide (La₂S₃) thin films from non-aqueous mediumBAGDE, G. D; PATHAN, H. M; LOKHANDE, C. D et al.Applied surface science. 2005, Vol 252, Num 5, pp 1502-1509, issn 0169-4332, 8 p.Article

A Rutherford backscattering spectroscopic study of the aluminium antimonide oxidation process in airSHIBATA, T; NAKATA, J; NANISHI, Y et al.Japanese journal of applied physics. 1994, Vol 33, Num 4A, pp 1767-1772, issn 0021-4922, 1Article

Interdiffusion studies in Bi-based layered systems with nanosecond laser pulsesMISSANA, T; AFONSO, C. N; DA SILVA, M. F et al.Applied physics. A, Solids and surfaces. 1994, Vol 59, Num 6, pp 653-658, issn 0721-7250Article

Collisional effects on the Weibel instabilityWALLACE, J. M; BRACKBILL, J. U; CRANFILL, C. W et al.The Physics of fluids. 1987, Vol 30, Num 4, pp 1085-1088, issn 0031-9171Article

ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAASKULAR SS; SEALY BJ; STEPHENS KG et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 8; PP. 831-838; BIBL. 16 REF.Article

EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTSBEAN JC; POATE JM.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 59-61; BIBL. 12 REF.Article

ION IMPLANTED INDUCED GIANT GETTERING OF GOLD IN SILICONBENTINI GG; LOTTI R; NIPOTI R et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 153-159; BIBL. 6 REF.Article

MEASUREMENTS OF THE RATIO BETWEEN PLANAR AND RANDOM STOPPING POWER FOR 80 TO 300 KEV PROTONS IN SILICONKUEHRT E; TAEURNER F.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. 513-519; ABS. GER; BIBL. 17 REF.Article